advanced power p-channel enhancement mode electronics corp. power mosfet lower gate charge bv dss -40v simple drive requirement r ds(on) 52m fast switching characteristic i d -17a description absolute maximum ratings symbol units v ds v v gs v i d @t c =25 a i d @t c =100 a i dm a p d @t c =25 w w/ t stg t j symbol value units rthj-c thermal resistance junction-case max. 5.0 /w rthj-a thermal resistance junction-ambient max. 110 /w data and specifications subject to change without notice 200828071-1/4 AP9565BGH/j rating -40 20 -17 0.2 rohs-compliant product continuous drain current, v gs @ 10v -11 pulsed drain current 1 -60 parameter drain-source voltage gate-source voltage continuous drain current, v gs @ 10v thermal data parameter total power dissipation operating junction temperature range storage temperature range -55 to 150 linear derating factor 25 -55 to 150 g d s g d s to-252(h) g d s to-251(j) the to-252 package is universally preferred for all commercial- industrial surface mount applications and suited for low voltage applications such as dc/dc converters. the through-hole version (ap9565bgj) is available for low-profile applications. the advanced power mosfets from apec provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
AP9565BGH/j electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =-250ua -40 - - v r ds(on) static drain-source on-resistance 2 v gs =-10v, i d =-8a - - 52 m v gs =-4.5v, i d =-6a - - 90 m v gs(th) gate threshold voltage v ds =v gs , i d =-250ua -1 - -3 v g fs forward transconductance v ds =-10v, i d =-8a - 7.7 - s i dss drain-source leakage current (t j =25 o c) v ds =-40v, v gs =0v - - -10 ua drain-source leakage current (t j =150 o c) v ds =-32v, v gs =0v - - -25 ua i gss gate-source leakage v gs = 20v - - 100 na q g total gate charge 2 i d =-8a - 7.8 12.5 nc q gs gate-source charge v ds =-32v - 1.7 - nc q gd gate-drain ("miller") charge v gs =-4.5v - 4.8 - nc t d(on) turn-on delay time 2 v ds =-20v - 8 - ns t r rise time i d =-8a - 17 - ns t d(off) turn-off delay time r g =3.3 ? v gs =-10v - 22 - ns t f fall time r d =1.25 -23- ns c iss input capacitance v gs =0v - 530 850 pf c oss output capacitance v ds =-25v - 110 - pf c rss reverse transfer capacitance f=1.0mhz - 75 - pf source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =-8a, v gs =0v - - -1.2 v t rr reverse recovery time 2 i s =-8a, v gs =0v, - 21 - ns q rr reverse recovery charge di/dt=-100a/s - 14 - nc notes: 1.pulse width limited by max. junction temperature. 2.pulse test this product is an electrostatic sensitive, please handle with caution. device or system are not authorized. this product has been qualified for consumer market. applications or uses as criterial component in life support 2/4
AP9565BGH/j fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 3/4 0 10 20 30 40 0123456 -v ds , drain-to-source voltage (v) -i d , drain current (a) t c =25 o c v g = -3.0 v -10v -7.0v -5.0v -4.5v 40 50 60 70 80 90 246810 -v gs , gate-to-source voltage (v) r ds(on) (m ) i d =-6a t c =25 : 0.6 0.9 1.2 1.5 1.8 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d =-8a v g =-10v 0.4 0.6 0.8 1 1.2 1.4 -50 0 50 100 150 t j , junction temperature ( o c) normalized -v gs(th) (v) 0 2 4 6 8 10 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 -v sd , source-to-drain voltage (v) -i s (a) t j =25 o c t j =150 o c 0 10 20 30 40 0123456 -v ds , drain-to-source voltage (v) -i d , drain current (a) t c = 150 o c -10v -7.0v -5.0v -4.5v v g = -3.0 v
AP9565BGH/j fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. transfer characteristics fig 12. gate charge waveform 4/4 q v g -4.5v q gs q gd q g charge 0 2 4 6 8 10 12 14 0 5 10 15 20 q g , total gate charge (nc) -v gs , gate to source voltage (v) v ds = -32v i d = -8a 10 100 1000 10000 1 5 9 13 17 21 25 29 -v ds , drain-to-source voltage (v) c (pf) f =1.0mh z c iss c oss c rss 0 10 20 30 40 02468 -v gs , gate-to-source voltage (v) -i d , drain current (a) t j =150 o c t j =25 o c v ds =-5v 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse 0.1 1 10 100 0.1 1 10 100 -v ds , drain-to-source voltage (v) -i d (a) t c =25 o c single pulse 100us 1ms 10ms 100ms dc
package outline : to-252 millimeters min nom max a2 1.80 2.30 2.80 a3 0.40 0.50 0.60 b1 0.40 0.70 1.00 d 6.00 6.50 7.00 d1 4.80 5.35 5.90 e3 3.50 4.00 4.50 e3 f 2.20 2.63 3.05 f1 0.5 0.85 1.20 e1 5.10 5.70 6.30 e2 0.50 1.10 1.80 e -- 2.30 -- c 0.35 0.50 0.65 1.all dimensions are in millimeters. 2.dimension does not include mold protrusions. part marking information & packing : to-252 symbols advanced power electronics corp. e e d d1 e2 e1 f b1 f1 a2 a3 c r : 0.127~0.381 ( 0.1mm part number package code 9565bgh ywwsss date code (ywwsss) y last digit of the year ww week sss sequence logo meet rohs requirement
min nom max original original original a 2.10 2.30 2.50 a1 0.60 1.20 1.80 b1 0.40 0.60 0.80 b2 0.60 0.95 1.25 c 0.40 0.50 0.65 c1 0.40 0.55 0.70 d 6.00 6.50 7.00 d1 4.80 5.40 5.90 e1 5.00 5.50 6.00 e2 1.20 1.70 2.20 e ---- 2.30 ---- f 7.00 --- 16.70 1.all dimensions are in millimeters. 2.dimension does not include mold protrusions. part marking information & packing : to-251 (low voltage) advanced power electronics corp.
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